Manufacturing Process

Excellent thickness uniformity (<3%)
Maximum heating temperature ~350℃
Good temperature uniformity

Reflectivity can reach over 99%
Dense film layers, no spectral shift in coverage area
Spectral uniformity ≦±1%

Capable of low-temperature processing
Excellent thickness uniformity (<1%)
Optimal film density and adhesion

Lower deposition temperature
Adjustable film internal stress
Good step coverage capability
High-quality dense film

Fast heating rate (20℃/sec)
Maximum heating temperature ~900℃
Excellent temperature uniformity (Substrate ΔT <3℃)

Advantages of stylus thickness measurement
Surface roughness and profile measurement
High stability and easy to operate

Adjustable variable temperature hotplate
Good coating uniformity (~1% internal/external)
Automated simultaneous processing of multiple photoresists

Resolution ~3μm
High-precision alignment system
High throughput and machine stability
Lower mask costs

Higher resolution ~1.5μm
High-precision alignment system
Superior machine stability

Adjustable variable temperature hotplate
Good development uniformity (~1% internal/external)

Combined physical and chemical etching
(Excellent etching directionality control)

Fully automated operating system
Automatic chemical supply system
High equipment stability

Superior wafer surface cleaning capability
Low ion energy to prevent chip damage